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| GaAs SPDT Switch DC - 3 GHz Features q q q q MASW2000 V 2.00 Low Insertion Loss, 0.5 dB Typical @ 2 GHz Fast Switching Speed, 22 ns Typical Reflective/Absorptive Configuration Ultra Low DC Power Consumption Guaranteed Specifications** (-55C to +85C) Frequency Range Insertion Loss DC-0.5 GHz DC-1.0 GHz DC-2.0 GHz DC-3.0 GHz Relective Absorptive Isolation DC-0.5 GHz DC-1.0 GHz DC-2.0 GHz DC-3.0 GHz DC-2.0 GHz DC-3.0 GHz DC-0.5 GHz DC-1.0 GHz DC-2.0 GHz DC-3.0 GHz DC - 3.0 GHz 0.5 dB Max 0.6 dB Max 0.8 dB Max 1.0 dB Max 1.20:1 Max 1.20:1 Max 1.20:1 Max 1.40:1 Max 1.20:1 Max 1.40:1 Max 43 dB Min 35 dB Min 27 dB Min 24 dB Min 50 Nominal 22 ns Typ 27 ns Typ 25 mV Typ 0/-8 +26 dBm Typ +32 dBm Typ Typical Performance @ +25C*** VSWR Operating Characteristics Impedance Switching Characteristics tRISE, tFALL (10/90% or 90/10% RF) tON, tOFF (50% CTL to 90/10% RF) Transients (In-Band) Input Power for 1dB Compression Control Voltages (Vdc) 0/-5 0.05 GHz +24 dBm 0.5-3.0 GHz +26 dBm Intermodulation Intercept Point (for two-tone input power up to +5 dBm) Intercept Points IP2 0.05 GHz +63 0.5-3.0 GHz +80 IP3 +43 +53 dBm Typ dBm Typ Control Voltage (Complementary Logic) VINLow 0 to -0.2 V @ 5 uA Max VINHi -5 V @ 60 uA Typ to -8 V @500 uA Max Die Size 0.056" x 0.056" x 0.010" 1.40mm x 1.40mm x 0.25mm) Schematic ** All specifications apply with 50 impedance connected to all RF ports, 0 and 0 and -5 Vdc control voltages. *** Loss changes 0.0025 dB/C (From -55C to +85C) For relective operation RL1/RL2 are unconnected. For absorptive operation RL1 connects to RF1 and RL2 connects to RF2. Handling, Mounting, Bonding Procedure Handling Precautions Permanent damage to the MASW2000 may occur if the following precautions are not adhered to: A. Cleanliness -- The MASW2000 should be handled in a clean environment. DO NOT attempt to clean unit after the MASW2000 is installed. B. Static Sensitivity -- All chip handling equipment and personnel should be DC grounded. C. Transient -- Avoid instrument and power supply transients while bias is applied to the MASW2000. Use shielded signal and bias cables to minimize inductive pick-up. D. Bias --Apply voltage to either control port A1/B2 or A2/B1 only when the other is grounded. Neither port should be allowed to "float". E. General Handling -- It is recommended that the MASW2000 chip be handled along the long side of the die with a sharp pair of bent tweezers. DO NOT touch the surface of the chip with fingers or tweezers. MASW2000 V 2.00 Truth Table*** Control Inputs A1/B2 VINHi VINLow A2/B1 VINLow VINHi Condition Of Switch RF1 On Off RF2 Off On *** For normal SPDT operation A1 is connected to B2 and A2 is connected to B1. Maximum Ratings A.Control Voltage (A1/B2 or A2/B1):-8.5 Vdc B. Max Input RF Power: +34 dBm C. Storage Temperature:-65C to +175C D. Maximum Operating Temperature:+175C Mounting The MASW2000 is back-metallized with Pd/Ni/Au (100/1,000/ 10,000A) metallization. It can be die-mounted with AuSn eutectic preforms or with thermally conductive epoxy. The package surface should be clean and flat before attachment. Eutectic Die Attach: A. A 80/20 gold/tin preform is recommended with a work surface temperature of approximately 255C and a tool temperature of 265C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be approximately 290C. B. DO NOT expose the MASW2000 to a temperature greater than 320C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: A. Apply a minimum amount of epoxy and place the MASW2000 into position. A thin epoxy fillet should be visible around the perimeter of the chip. B. Cure epoxy per manufacturer's recommended schedule. C. Electrically conductive epoxy may be used but is not required. BondPad Dimensions Inches (mm) RF:0.004 x 0.004 (0.100 x 0.100) RF1, RF2:0.009 x 0.009 (0.225 x 0.225) A1, A2, B1, B2:0.004 x 0.004 (0.100 x 0.100) GND1, GND2:0.009 x 0.004 (0.225 x 0.105) RL1, RL2:0.004 x 0.005 (0.100 x 0.125) Die Size Inches (mm) 0.056 x 0.056 x 0.010 (1.40 x 1.40 x 0.25) Wire Bonding A. Ball or wedge bond with 1.0 mil diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Ultrasonic energy and time should be adjusted to the minimum levels to achieve reliable wirebonds. B. Wirebonds should be started on the chip and terminated on the package. GND bonds should be as short as possible; at least three and no more than four bond wires from ground pads to package are recommended. |
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